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| Ordering number : ENN6979 2SJ596 P-Channel Silicon MOSFET 2SJ596 DC / DC Converter Applications Preliminary Features * * * Package Dimensions unit : mm 2083B [2SJ596] 6.5 5.0 4 1.5 Low ON-resistance. Ultrahigh-speed switching. 4V drive. 2.3 0.5 0.85 0.7 0.8 1.6 5.5 7.0 1.2 7.5 0.6 0.5 1 2 3 1 : Gate 2 : Drain 3 : Source 4 : Drain 2.3 2.3 SANYO : TP unit : mm 2092B [2SJ596] 6.5 5.0 4 2.3 1.5 0.5 5.5 7.0 0.85 0.5 0.8 1 0.6 2 3 2.5 1.2 1.2 0 to 0.2 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP-FA 2.3 2.3 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 62501 TS IM TA-3119 No.6979-1/4 2SJ596 Specifications Absolute Maximum Ratings at Ta=25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Tc=25C Conditions Ratings --60 20 --8 --32 1 20 150 --55 to +150 Unit V V A A W W C C Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions ID=-1mA, VGS=0 VDS=--60V, VGS=0 VGS=16V, VDS=0 VDS=--10V, ID=--1mA VDS=--10V, ID=-4A ID=-4A, VGS=-10V ID=-2A, VGS=-4V VDS=--20V, f=1MHz VDS=--20V, f=1MHz VDS=--20V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit VDS=--10V, VGS=--10V, ID=--8A VDS=--10V, VGS=--10V, ID=--8A VDS=--10V, VGS=--10V, ID=--8A IS=--8A, VGS=0 --1.0 5 7 110 155 680 170 50 10 30 75 35 22 4 5 --0.9 --1.2 145 220 Ratings min --60 --10 10 --2.4 typ max Unit V A A V S m m pF pF pF ns ns ns ns nC nC nC V Marking : J596 Switching Time Test Circuit VDD= --30V 0V --10V VIN ID= --4A RL=7.5 VIN PW=10s D.C.1% D VOUT G P.G 50 2SJ596 S No.6979-2/4 2SJ596 --9 --8 --7 ID -- VDS 0V -6 .0V --5 .0V --16 ID -- VGS Tc= --25 25 0 --0.5 --1.0 --1.5 --2.0 --14 Drain Current, ID -- A --8 . --6 --5 --4 --3 --2 --1 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --3.5V Drain Current, ID -- A -- --12 --10 --8 --6 --4 --2 0 --1 0 .0V --3.0V VGS= --2.5V --1.6 --1.8 --2.0 C --2.5 Tc =7 5 --25 C C --3.0 --3.5 --4.0 --4.5 25 --5.0 IT03357 140 160 IT03359 --1.2 IT03361 --60 IT03363 V 4.0 Drain-to-Source Voltage, VDS -- V 300 IT03356 300 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V RDS(on) -- Tc Tc=25C Static Drain-to-Source On-State Resistance, RDS(on) -- m 250 Static Drain-to-Source On-State Resistance, RDS(on) -- m 250 200 200 ID= --2A 150 --4A 150 V --2A --10 I D= S= , VG --4A I D= -S= , VG 4V 100 100 50 50 0 0 --2 --4 --6 --8 --10 --12 --14 --16 --18 --20 0 --60 --40 --20 0 20 40 60 80 100 120 Gate-to-Source Voltage, VGS -- V Forward Transfer Admittance, yfs -- S 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 yfs -- ID IT03358 3 2 --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 --0.01 0 --0.2 Case Temperature, Tc -- C IF -- VSD VGS=0 VDS= --10V T c= --2 C 5 75 C C 25 Forward Current, IF -- A 75C 25C 0.01 --0.001 2 3 5 7 --0.01 2 3 5 7--0.1 2 3 5 7--1.0 2 3 5 7--10 2 3 IT03360 Drain Current, ID -- A 3 2 --0.4 --0.6 --25 C Tc= --0.8 --1.0 SW Time -- ID VDD= --30V VGS= --10V td (off) 3 2 1000 Ciss, Coss, Crss -- VDS f=1MHz Diode Forward Voltage, VSD -- V Switching Time, SW Time -- ns 100 7 5 3 2 Ciss, Coss, Crss -- pF 7 5 3 2 Ciss tf Coss 100 7 5 3 2 10 tr 10 7 5 3 --0.1 td(on) Crss 2 3 5 7 --1.0 2 3 5 7 --10 2 3 0 --10 --20 --30 --40 --50 Drain Current, ID -- A IT03362 Drain-to-Source Voltage, VDS -- V No.6979-3/4 C 75 VDS= --10V C C 2SJ596 --10 --9 VGS -- Qg VDS= --10V ID= --8A Drain Current, ID -- A --100 7 5 3 2 --10 7 5 3 2 --1.0 7 5 3 2 ASO IDP= --32A 10s 10 1m 0s s ms Gate-to-Source Voltage, VGS -- V --8 --7 --6 --5 --4 --3 --2 --1 0 0 2 4 6 8 10 12 14 16 18 20 22 ID= --8A DC 10 10 Op er 0m on s ati Operation in this area is limited by RDS(on). Tc=25C Single pulse 2 3 5 7 --1.0 2 3 5 7 --10 2 3 --0.1 --0.1 Total Gate Charge, Qg -- nC 1.2 IT03364 25 PD -- Ta Allowable Power Dissipation, PD -- W Drain-to-Source Voltage, VDS -- V 5 7 --100 IT03365 PD -- Tc Allowable Power Dissipation, PD -- W 1.0 20 0.8 15 0.6 10 0.4 0.2 5 0 0 20 40 60 80 100 120 140 160 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- C IT03366 Case Temperature, Tc -- C IT03367 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of June, 2001. Specifications and information herein are subject to change without notice. PS No.6979-4/4 |
Price & Availability of 2SJ596
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